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Teilenummer | WNMD2157 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 6 Seiten WNMD2157
Dual N-Channel, 20V, 5.4A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.019@ VGS=4.5V
0.024@ VGS=2.5V
0.034@ VGS=1.8V
WNMD2157
Http//:www.willsemi.com
Descriptions
Package
The WNMD2157 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2157 is Pb-free and
Halogen-free.
Features
G1 D1/D2
65
G2
4
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
2157
YYWW
1 23
2157
YY
WW
= Device Code
= Year
= Week
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
Marking
Order information
z Power Switch
z Load Switch
Device
Package
Shipping
WNMD2157-6/TR SOT-23-6L 3000/Reel&Tape
z Charging
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.3
Package outline dimensions
SOT-23-6L
WNMD2157
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
©
Will Semiconductor Ltd.
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
1.800
0.300
0e
Dimensions in millimeter
Typ.
1.150
0.050
1.100
0.400
0.150
2.920
1.600
2.800
0.950(BSC)
1.900
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
2.000
0.600
8e
6 Jan, 2015 - Rev.1.3
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNMD2157 Schematic.PDF ] |
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