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Teilenummer | WNM3011 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 7 Seiten WNM3011
N-Channel, 30V, 5.7A, Power MOSFET
WNM3011
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
()
0.028@ 10V
0.039@ 4.5V
Descriptions
The WNM3011 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3011 is Pb-free.
SOT-23-6L
DDS
65 4
123
DDG
Configuration (Top View)
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
3011
YYWW
1 23
3011
YY
WW
= Device Code
=Year
=Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3011-6/TR SOT-23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec, 2011 - Rev.1.0
WNM3011
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 91°C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Will Semiconductor Ltd. 6 Dec, 2011 - Rev.1.0
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNM3011 Schematic.PDF ] |
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