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WNM3008 Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNM3008
Beschreibung N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 7 Seiten
WNM3008 Datasheet, Funktion
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.044@ VGS=10V
0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
W38*
W38
*
= Device Code
= Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2






WNM3008 Datasheet, Funktion
WNM3008
1
Duty Cycle = 0.5
1
0.05.2 D = 0.5
0.2 0.2
0.10.1
0.1
0.10.05
0.020.05
0.05
0.02
0.01
0.01
0.0005.02
Single Pulse
0.002
0.001
0.0001
0.01
10-4
Single0.P00u1lse
10-3
0.01
10-2
0.1
t1 , TIME (sec)
1
10-1
1
Square Wave Pulse Duration (s)
R θJA (t) = r(t) * RθJA
NotResθ:JA = 270 °C/W
P(pk)PDM
t1 t 2t1
12T..DJDPu-eutTyrtyAUCCny=cyitPlceBle,a*t,D2sRDe=θ==Jt1AR/(tt2th)ttJ12A =125 °C/W
10 3. TJM - TA = PDM1Z0th0JA(t) 300
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Feb, 2012 - Rev.1.2

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