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Teilenummer | WNM2024 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 6 Seiten WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
VDS (V)
20
Rds(on) (Ω)
0.027@ VGS=4.5V
0.031@ VGS=2.5V
0.036@ VGS=1.8V
Descriptions
The WNM2024 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2024 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
WNM2024
Http//:www.willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
3
W24*
12
W24= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WNM2024-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.1
Package outline dimensions
SOT-23
WNM2024
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Will Semiconductor Ltd.
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Dimensions in millimeter
Typ.
1.025
0.050
0.975
0.400
0.115
2.900
1.300
2.400
0.950TYP
1.900
0.550REF
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8°
6 Dec,2011 - Rev.1.1
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WNM2024 Schematic.PDF ] |
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