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WNM07N60F Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNM07N60F
Beschreibung N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 8 Seiten
WNM07N60F Datasheet, Funktion
WNM07N60/WNM07N60F
600V N-Channel MOSFET
Description
The WNM07N60/WNM07N60F is N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced high voltage MOSFET Process and
design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in popular
AC-DC applications, power switching application
and a wide variety of other applications.
WNM07N60/WNM07N60F
Features
600V@TJ=25°C
Typ.RDS(on)=1.0
Low gate charge
100% avalanche tested
100% Rg tested
D
GDS
TOT-O22- 0
G
S
GD S
TO-220F
WNM07N60 =Devices code
Y Y =Year
WW =Week
WNM07N60F =Devices code
Y Y =Year
WW =Week
Order Information
Device
Package
WNM07N60_3/T
TO-220
WNM07N60F_3/T TO-220-F
Units/Tube
50
50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM07N60
WNM07N60F
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current
Single Pulsed Avalanche Energy C
VDS 600
VGS ±30
7
ID
4.8
600
±30
7*
4.8*
IDM 28
EAS 124
Peak diode recovery dv/dt
dv/dt
5
Power Dissipation B
TC=25°C
156
PD
Derate above 25°C
1.24
34
0.27
Operating and Storage Temperature Range
TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
Maximum Junction-to-Ambient A
Maximum Case to Sink
Maximum Junction-to-Case
TL
RθJA
RθCS
RθJC
260
65 65
0.5
0.8 3.6
*Drain current limited by maximum junction temperature.
Unit
V
A
A
mJ
V/ns
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Dec, 2013 - Rev.1.0






WNM07N60F Datasheet, Funktion
WNM07N60/WNM07N60F
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Will Semiconductor Ltd. 6 Dec, 2013 - Rev.1.0

6 Page







SeitenGesamt 8 Seiten
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