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Número de pieza | NGTB15N60R2FG | |
Descripción | IGBT | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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IGBT
600V, 14A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)
IGBT tf=75ns typ.
Diode VF=1.7V typ. (IF=15A)
Diode trr=95ns typ.
10s Short Circuit Capability
Applications
General Purpose Inverter
Electrical Connection
N-Channel
2
1
1:Gate
2:Collector
3:Emitter
3
Specifications
Absolute Maximum Ratings at Ta = 25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25C *2
@Tc=100C *2
Collector Current (Peak)
Pulse width Limited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICP
IO
PD
Tj
Tstg
Value
600
20
24
14
60
15
54
175
55 to +175
Unit
V
V
A
A
A
A
W
C
C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Marking
TO-220F-3FS
GTB15N
60R2 LOTNo.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
December 2014 - Rev. 1
1
Publication Order Number :
NGTB15N60R2FG/D
1 page NGTB15N60R2FG
www.onsemi.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NGTB15N60R2FG.PDF ] |
Número de pieza | Descripción | Fabricantes |
NGTB15N60R2FG | IGBT | ON Semiconductor |
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