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PDF NGTB10N60R2DT4G Data sheet ( Hoja de datos )
| Número de pieza | NGTB10N60R2DT4G | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB10N60R2DT4G
IGBT
600V, 10A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
IGBT tf=65ns (typ)
Diode VF=1.5V (typ) [IF=10A]
Diode trr=90ns (typ)
5s Short Circuit Capability
Applications
General Purpose Inverter
Electrical Connection
N-Channel
2,4
1
1:Gate
2:Collector
3:Emitter
3 4:Collector
Specifications
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25C *2
@Tc=100C *2
Collector Current (Peak)
Pulse width Llimited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICP
IO
PD
Tj
Tstg
Value
600
20
20
10
40
10
72
175
55 to +175
Unit
V
V
A
A
A
A
W
C
C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
4
12
3
DPAK
CASE 369C
Marking Diagram
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
NGTB10N60R2DT4G/D
1 page  
NGTB10N60R2DT4G
www.onsemi.com
5
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