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PDF FNB81060T3 Data sheet ( Hoja de datos )
| Número de pieza | FNB81060T3 | |
| Descripción | Motion SPM 8 Module | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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FNB81060T3
Motion SPM® 8 Series
May 2016
Features
• 600 V - 10 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-high interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage, Over Current
and Short-Circuit Current Protection
• Fault Output for Under-Voltage, Over Current and
Short-Circuit Current Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Isolation Rating: 1500 Vrms / min.
General Description
FNB81060T3 is a Motion SPM 8 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor /
HVAC.
Related Resources
• AN-9112 - Smart Power Module, Motion SPM® 8
Series User’s Guide.
SPM25-FAA
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNB81060T3
Device Marking
NB81060T3
Package
SPM25-FAA
Packing Type
RAIL
Quantity
15
©2016 Fairchild Semiconductor Corporation
FNB81060T3 Rev. 1.0
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ ≤150°C (Note 4)
TC = 25°C, TJ ≤150°C, Under 1 ms Pulse
Width (Note 4)
TJ Operating Junction Temperature
Rating
450
500
600
10
20
-40 ~ 150
Unit
V
V
V
A
A
°C
Control Part
Symbol
Parameter
VDD Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFS Function Supply Voltage
IFO Fault Current
VSC Current Sensing Input Voltage
Conditions
Rating
Applied between VDD - COM
Applied between VBU - VSU, VBV - VSV,
VBW - VSW
Applied between INUH, INVH, INWH, INUL,
INVL, INWL - COM
Applied between /FO, /SDW ,VTS - COM
Sink Current at /FO, /SDW ,VTS pin
Applied between CSC - COM
20
20
-0.3 ~ VDD +0.3
-0.3 ~ VDD +0.3
2
-0.3 ~ VDD +0.3
Unit
V
V
V
V
mA
V
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Connect Pins to Heat Sink Plate
Conditions
VDD = VBS = 13.5 ~ 16.5 V, TJ = 150°C,
Non-Repetitive, < 2 s
See Figure 2
AC 60 Hz, Sinusoidal, 1 Minute, Connection
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
1500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
(Note 4)
Inverter IGBT part, (Per Module)
Inverter FWDi part (Per Module)
Note:
4. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
3.40
3.86
Unit
°C / W
°C / W
©2016 Fairchild Semiconductor Corporation
FNB81060T3 Rev. 1.0
5
www.fairchildsemi.com
5 Page 
Hin
Lin
Ho
d1
Lo
d3 d4 d5
d2
/Fo
Figure 11. Inter-Lock Function
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No LO
d3 : High Side Noise Mode : No HO
d4 : Low Side First - Input - First - Output Mode
d5 : IN - Phase Mode : No HO
Hin: High-side InputSignal
Lin: Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo :Low-side IGBTGate Voltage
/Fo : Fault Output
HIN
LIN
HO
Soft Off
LO
Over-Current
Detection
CSC
Activated by next input
after fault clear
No Output
Smart Turn -off
/FO
Figure 12. Fault-Out Function By Over Current Protection
HIN : High-side Input Signal
LIN : Low-side Input Signal
HO : High-Side Output Signal
LO : Low-Side Output Signal
CSC : Over Current Detection Input
/FO : Fault Out Function
©2016 Fairchild Semiconductor Corporation
FNB81060T3 Rev. 1.0
11
www.fairchildsemi.com
11 Page | ||
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| PDF Descargar | [ Datasheet FNB81060T3.PDF ] | |
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