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Teilenummer | NGTB30N120IHRWG |
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Beschreibung | IGBT | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 10 Seiten NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
60
30
120
Unit
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ −40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
30N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB30N120IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 1
1
Publication Order Number:
NGTB30N120IHR/D
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
140
120
100 TC = 80°C
80 TC = 110°C
60
40
20
VCE = 600 V, TJ ≤ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
0 (as noted), D = 0.5
0.01 0.1 1
10
100
1000
FREQUENCY (kHz)
Figure 19. Collector Current vs. Switching
Frequency
1500
1450
1400
1350
1300
1250
1200
−40 −15 10 35 60 85 110 135
TJ, JUNCTION TEMPERATURE (°C)
Figure 20. Typical V(BR)CES vs. Temperature
1
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
0.001
0.000001
Single Pulse
0.00001
RqJC = 0.392
Junction R1 R2
Rn
Ci = ti/Ri
C1 C2
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
0.1
Ri (°C/W)
0.04597
Case 0.000101
0.009460
0.004201
0.020965
0.040205
0.003094
0.037895
0.016194
0.000100
0.246889
ti (sec)
0.000218
0.031311
0.001057
0.007527
0.004770
0.007965
0.323174
0.083449
0.617513
316.228
0.405040
1 10
http://onsemi.com
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ NGTB30N120IHRWG Schematic.PDF ] |
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