Datenblatt-pdf.com


NGTB30N120IHRWG Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NGTB30N120IHRWG
Beschreibung IGBT
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 10 Seiten
NGTB30N120IHRWG Datasheet, Funktion
NGTB30N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses IH Cooker Application
Reliable and Cost Effective Single Die Solution
These are PbFree Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gateemitter voltage
Transient Gateemitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
60
30
120
Unit
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ 40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1200 V
VCEsat = 2.20 V
Eoff = 0.70 mJ
C
G
E
G
C
E
TO247
CASE 340AL
MARKING DIAGRAM
30N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
NGTB30N120IHRWG TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 1
1
Publication Order Number:
NGTB30N120IHR/D






NGTB30N120IHRWG Datasheet, Funktion
NGTB30N120IHRWG
TYPICAL CHARACTERISTICS
140
120
100 TC = 80°C
80 TC = 110°C
60
40
20
VCE = 600 V, TJ 175°C, Rgate = 10 W,
VGE = 0/15 V, Tcase = 80°C or 110°C
0 (as noted), D = 0.5
0.01 0.1 1
10
100
1000
FREQUENCY (kHz)
Figure 19. Collector Current vs. Switching
Frequency
1500
1450
1400
1350
1300
1250
1200
40 15 10 35 60 85 110 135
TJ, JUNCTION TEMPERATURE (°C)
Figure 20. Typical V(BR)CES vs. Temperature
1
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
0.001
0.000001
Single Pulse
0.00001
RqJC = 0.392
Junction R1 R2
Rn
Ci = ti/Ri
C1 C2
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 21. IGBT Transient Thermal Impedance
0.1
Ri (°C/W)
0.04597
Case 0.000101
0.009460
0.004201
0.020965
0.040205
0.003094
0.037895
0.016194
0.000100
0.246889
ti (sec)
0.000218
0.031311
0.001057
0.007527
0.004770
0.007965
0.323174
0.083449
0.617513
316.228
0.405040
1 10
http://onsemi.com
6

6 Page







SeitenGesamt 10 Seiten
PDF Download[ NGTB30N120IHRWG Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
NGTB30N120IHRWGIGBTON Semiconductor
ON Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche