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PDF FW276 Data sheet ( Hoja de datos )
| Número de pieza | FW276 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FW276 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Ordering number : ENA2289
FW276
N-Channel Power MOSFET
450V, 0.7A, 12.1Ω, Dual SOIC8
http://onsemi.com
Features
• On-resistance RDS(on)=9.3Ω(typ.)
• Input capacitance Ciss=55pF(typ.)
• 10V drive
• Nch+Nch dual MOSFET
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Tc = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (PW≤10μs)
ID
IDL*1
IDP
Duty cycle≤1%
Power Dissipation (1 unit)
PD
Total Power Dissipation (2 units)
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Lead Temperature for Soldering Purposes,
3mm from Case for 10 Seconds
Note: *1 Package limited
TL
Conditions
Value
450
±30
0.7
0.35
2.8
1.6
2.0
150
- 55 to +150
260
Unit
V
V
A
A
A
W
W
°C
°C
°C
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Ambient (1 unit) *2
Junction to Ambient (2 units) *2
RθJA
RθJA
78.1
62.5
Note: *2 Surface mounted on ceramic board using 2000mm2×0.8mm
Unit
°C /W
°C /W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)
Ciss
Coss
Crss
Conditions
ID=10mA, VGS=0V
VDS=360V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.35A
ID=0.35A, VGS=10V
VDS=20V, f=1MHz
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
min
450
3.5
Value
Unit
typ max
V
100 μA
±10 μA
4.5 V
0.4 S
9.3 12.1 Ω
55 pF
24 pF
8 pF
Continued on next page.
30414 TKIM TC-00003100 No. A2289-1/6
1 page  
Package Dimensions
FW276-TL-2H
SOIC-8
CASE 751CR
ISSUE O
Unit : mm
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain2
6: Drain2
7: Drain1
8: Drain1
FW276
Recommended Soldering
Footprint
Ordering & Package Information
Device
FW276-TL-2H
Package
SOIC8
(SC-87, SOT-96)
Shipping
2,500
pcs. / reel
note
Pb-Free
and
Halogen Free
Electrical Connection
8765
Packing Type:TL
TL
Marking
FW276
LOT No.
1234
No.A2289-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW276.PDF ] | |
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