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MJE13001H Schematic ( PDF Datasheet ) - SI Semiconductors

Teilenummer MJE13001H
Beschreibung TRANSISTORS
Hersteller SI Semiconductors
Logo SI Semiconductors Logo 




Gesamt 4 Seiten
MJE13001H Datasheet, Funktion
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
MJE13001H
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES:■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
●应用:节能灯 电子镇流器
APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST
RoHS COMPLIANT
● 最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-92/92S
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
700
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
480
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC 0.3 A
集电极耗散功率
Total Dissipation at Ta=25
Ptot
1.0
W
最高工作温度
Junction Temperature
Tj 150 °C
贮存温度
Storage Temperatur tf e
●电特性(Tc=25°C
Tstg -65-150
°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
最小值 最大值
单位
CHARACTERISTICS
SYMBOL TEST CONDITION MIN MAX
集电极-基极截止电流
Collector-Base Cutoff Current
ICBO
VCB=700V
100
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
VCE=480V,IB=0
250
UNIT
μA
μA
集电极-基极电压
Collector-Base Voltage
VCBO
IC=1mA,IE=0
700
V
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
VCEO
VEBO
IC=10mA,IB=0
IE=1mA,IC=0
480
9
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
Vcesat
IC=0.05A, ,IB=0.01A
IC=160mA,IB=50mA
0.4
V
0.8
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vbesat
IC=50mA,IB=10mA
1.1 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE VCE=20V,IC=20mA 20
VCE=5V,IC=300mA
5
30
贮存时间 Storage Time
下降时间 Falling Time
tS
VCC=5V,IC=0.1A
1.0 2.0
tf (UI9600)
0.8
µs
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
TO-92 普通袋装/NORMAL PACKING
MJE13001H TO-92
MJE13001H TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
MJE13001H TO-92S
MJE13001H TO-92S-HF
TO-92 盒式编带/AMMOPACK
MJE13001H TO-92-AP
MJE13001H TO-92-AP-HF
Si semiconductors 2015.1
1





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