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Número de pieza | EMBB0N10A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBB0N10A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
220mΩ
ID 7A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=5A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/8/30
EMBB0N10A
LIMITS
±20
7
5
28
5
1.25
0.625
25
10
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
5
62.5
UNIT
°C / W
p.1
1 page EMBB0N10A
Gate Charge Characteristics
10
I D = 2.5A
8
6
VD S = 50V 80V
4
2
0
0
6 12 18
Q g ‐ Gate Charge( nC )
24
1000
900
800
Capacitance Characteristics
f = 1M Hz
Ciss V G S = 0 V
700
600
500
400
300
200
100
0
0
Coss
Crss
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
M a xim u m S a fe O p e ra tin g A re a
100
1 0 R D S ( O N L) im it
1
10uS
100uS
1mS
10
DC
10
0mS
m
S
Single Pulse Maximum Power Dissipation
3000 RSθi n JC g =le 5 P Cu/lW°se
TC = 25° C
2500
2000
1500
0 .1
V G S = 1 0 V
S in g le P u lse
R JC = 5 ° C / W
T C = 2 5 ° C
0 .0 1
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
1000
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
Transient Thermal Response Curve
100
D=0.5
0.2
10‐1 0.1
0.05
※Note :
1. RθJC(t)=5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
0.02
0.01
10‐2
single pulse
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/8/30
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMBB0N10A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBB0N10A | Field Effect Transistor | Excelliance MOS |
EMBB0N10J | Field Effect Transistor | Excelliance MOS |
EMBB0N10V | Field Effect Transistor | Excelliance MOS |
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