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PDF SLP80R380SJ Data sheet ( Hoja de datos )
| Número de pieza | SLP80R380SJ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Maple Semiconductor | |
| Logotipo |  |
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General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction
This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD80R380SJ,SLU80R380SJ,SLP80R380SJ
SLF80R380SJ, SLB80R380SJ, SLI80R380SJ
800V N-Channel MOSFET
Features
-15A, 800V, RDS(on) typ.= 0.34Ω@VGS = 10 V
- Low gate charge ( typical
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
43nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK
GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK
I2-PAK / I-PAK/ TO-220
VDSS
Drain-Source Voltage
800
ID Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
15
8.9
IDM Drain Current - Pulsed
(Note 1)
42
VGSS Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
284
IAR Avalanche Current
(Note 1)
2.4
EAR
Repetitive Avalanche Energ
(Note 1)
0.43
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
15
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
104
0.83
TJ, TSTG Operating and Storage Temperature Range
-55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
*Drain current limited by maximum junction temperature.
TO-220F
15*
8.9*
42*
32
0.27.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
DPAK
1.2
-
62
IPAK
1.2
-
62
Value
TO220 D2PAK
1.2 1.2
0.5 0.5
62 62
I2PAK
1.2
0.5
62
TO220F
3.9
-
80
Units
℃/W
℃/W
℃/W
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
Page1
1 page  
Figure 13: Max. transient thermal impedance TO-220
Figure 14: Max. transient thermal impedance TO-220FullPAK
Figure 15: Avalanche energy
Maple Semiconductor CO.,LTD
http://www.maplesemi.com
Rev 1.0 September 2015
Page5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SLP80R380SJ.PDF ] | |
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