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PDF MDFS11N60 Data sheet ( Hoja de datos )
| Número de pieza | MDFS11N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDFS11N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDFS11N60
N-Channel MOSFET 600V, 11A, 0.55Ω
General Description
The MDFS11N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDFS11N60 is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 11A
RDS(ON) ≤ 0.55Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
G
DS
TO-220FT
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
VDSS
VGSS
ID
IDM
PD
dv/dt
EAS
TJ, Tstg
Rating
600
±30
11
6.9
44
49
0.39
4.5
720
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
2.55
Unit
oC/W
Mar 2016 Version 1.2
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
ΦR
3 Leads, TO-220FT
E
A
F
3 x b1
3xb
2xe
θ
cQ
Note: PKG Body Sizes exclude Mold Flash & Gate Burrs
[Unit:mm]
Mar 2016 Version 1.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDFS11N60.PDF ] | |
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