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Teilenummer | RU1H40L |
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Beschreibung | N-Channel Advanced Power MOSFET | |
Hersteller | Ruichips | |
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Gesamt 9 Seiten RU1H40L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
RDS (ON) =22mΩ(Typ.)@VGS=10V
RDS (ON) =28mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• High Speed Power Switching.
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Rating
100
±25
175
-55 to 175
40
①
160
②
40
30
97
48
1.55
Unit
V
°C
°C
A
A
A
W
°C/W
110 mJ
www.ruichips.com
Avalanche Test Circuit and Waveforms
RU1H40L
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
6
www.ruichips.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ RU1H40L Schematic.PDF ] |
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