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RU1H40L Schematic ( PDF Datasheet ) - Ruichips

Teilenummer RU1H40L
Beschreibung N-Channel Advanced Power MOSFET
Hersteller Ruichips
Logo Ruichips Logo 




Gesamt 9 Seiten
RU1H40L Datasheet, Funktion
RU1H40L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/40A,
RDS (ON) =22mΩ(Typ.)@VGS=10V
RDS (ON) =28mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
Fast Switching and Fully Avalanche Rated
Reliable and Rugged
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• High Speed Power Switching.
Pin Description
TO252
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
Rating
100
±25
175
-55 to 175
40
160
40
30
97
48
1.55
Unit
V
°C
°C
A
A
A
W
°C/W
110 mJ
www.ruichips.com






RU1H40L Datasheet, Funktion
Avalanche Test Circuit and Waveforms
RU1H40L
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
6
www.ruichips.com

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