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Teilenummer | RU1HP35L |
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Beschreibung | P-Channel Advanced Power MOSFET | |
Hersteller | Ruichips | |
Logo | ||
Gesamt 8 Seiten RU1HP35L
P-Channel Advanced Power MOSFET
Features
• -100V/-35A,
RDS (ON) =30mΩ(Typ.)@VGS=-10V
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D
Applications
•Load switch
G
S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-35
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-140
-35
-21
105
52
1.45
100
A
A
W
°C/W
°C/W
180 mJ
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2017
1
www.ruichips.com
Avalanche Test Circuit and Waveforms
RU1HP35L
Switching Time Test Circuit and Waveforms
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2017
6
www.ruichips.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ RU1HP35L Schematic.PDF ] |
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