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PDF RU1HE3D Data sheet ( Hoja de datos )
| Número de pieza | RU1HE3D | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1HE3D
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/3A,
RDS (ON) =130mΩ (Typ.) @ VGS=10V
RDS (ON) =140mΩ (Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Available
Pin Description
SOT-223
Applications
• Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current(VGS=10V)
TC=25°C
TC=70°C
PD
②
RθJA
Maximum Power Dissipation
TC=25°C
TC=70°C
Thermal Resistance-Junction to Ambient
Rating
100
±20
150
-55 to 150
3
12
①
3
2.5
2.5
1.6
50
Unit
V
°C
°C
A
A
A
W
°C/W
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – OCT., 2012
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU1HE3D
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. D – OCT., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU1HE3D.PDF ] | |
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