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PDF RU140N10R Data sheet ( Hoja de datos )
| Número de pieza | RU140N10R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU140N10R
N-Channel Advanced Power MOSFET
Features
• 100V/140A
RDS (ON)=6.5mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Low Gate Charge
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·Switching applications
Pin Description
TO-220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy ,Single Pulsed
N-Channel MOSFET
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
100
±25
175
-55 to 175
①
140
②
560
①
140
①
100
250
125
0.6
1.1
Unit
V
°C
°C
A
A
W
°C/W
J
Copyright Ruichips Semiconductor Co., Ltd
Rev. B –NOV., 2012
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU140N10R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B –NOV., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU140N10R.PDF ] | |
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