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Teilenummer | RU1H100R |
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Beschreibung | N-Channel Advanced Power MOSFET | |
Hersteller | Ruichips | |
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Gesamt 9 Seiten RU1H100R
N-Channel Advanced Power MOSFET
Features
• 100V/75A
RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
StoragEeAST③emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.B –SEP., 2010
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
Unit
100
±25
175
-55 to 175
①
75
②
300
①
75
59
150
75
1.0
V
°C
°C
A
A
W
°C/W
196 mJ
www.ruichips.com
Avalanche Test Circuit and Waveforms
RU1H100R
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B –SEP., 2010
6
www.ruichips.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ RU1H100R Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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