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PDF RU40191S Data sheet ( Hoja de datos )
| Número de pieza | RU40191S | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU40191S
N-Channel Advanced Power MOSFET
Features
• 40V/190A,
RDS (ON) =1.8mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters and Off-line UPS
• Switching Applications
Pin Description
D
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
40
±20
175
-55 to 175
190
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
760
190
146
300
150
0.5
62.5
A
A
W
°C/W
°C/W
812 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
1
www.ruichips.com
1 page  
Typical Characteristics
VGS=8,9,10V
5V
4V
3V
RU40191S
VGS=10V
VGS=10V
ID=75A
TJ=25°C
Rds(on)=1.8mΩ
TJ=175°C
TJ=25°C
Frequency=1.0MHz
Ciss
Crss
Coss
VDS=32V
IDS=75A
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2016
5
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU40191S.PDF ] | |
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