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PDF RU2520H Data sheet ( Hoja de datos )
| Número de pieza | RU2520H | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU2520H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 25V/13A,
RDS (ON) =9mΩ (Typ.) @ VGS=10V
RDS (ON) =14.5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management in Notebook
Computer, and DC-DC Converters in
Networking Systems.
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
TC=25°C
ID
Continuous Drain Current(VGS=10V)
TC=25°C
TC=70°C
PD
②
RθJA
Maximum Power Dissipation
TC=25°C
TC=70°C
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Rating
25
±20
150
-55 to 150
13
①
52
13
9.8
2.5
1.6
50
110
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JAN., 2011
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU2520H
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– JAN., 2011
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU2520H.PDF ] | |
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