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RU1HP60Q Schematic ( PDF Datasheet ) - Ruichips

Teilenummer RU1HP60Q
Beschreibung P-Channel Advanced Power MOSFET
Hersteller Ruichips
Logo Ruichips Logo 




Gesamt 8 Seiten
RU1HP60Q Datasheet, Funktion
Features
• -100V/-60A,
RDS (ON) =18m(Typ.)@VGS=-10V
• Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
•Load switch
RU1HP60Q
P-Channel Advanced Power MOSFET
Pin Description
G DS
TO247
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
IDContinuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
1
P-Channel MOSFET
Rating
Unit
TC=25°C
-100
±25
175
-55 to 175
-60
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-240
-60
-42
192
96
0.78
50
A
A
W
°C/W
°C/W
400 mJ
www.ruichips.com






RU1HP60Q Datasheet, Funktion
Avalanche Test Circuit and Waveforms
RU1HP60Q
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
6
www.ruichips.com

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