|
|
Teilenummer | RU1HL8L |
|
Beschreibung | P-Channel Advanced Power MOSFET | |
Hersteller | Ruichips | |
Logo | ||
Gesamt 9 Seiten RU1HL8L
P-Channel Advanced Power MOSFET
Features
• -100V/-8A,
RDS (ON) =350mΩ(Typ.)@VGS=-10V
RDS (ON) =400mΩ(Typ.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO252
Applications
• Power Management
• DC/DC Converters
P-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-100
±16
175
-55 to 175
-8
①
-32
-8
-6
40
20
3.75
25
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– JUN., 2014
www.ruichips.com
Avalanche Test Circuit and Waveforms
RU1HL8L
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– JUN., 2014
6
www.ruichips.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ RU1HL8L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RU1HL8L | P-Channel Advanced Power MOSFET | Ruichips |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |