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Teilenummer | 2N7002 |
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Beschreibung | N-Channel Advanced Power MOSFET | |
Hersteller | Ruichips | |
Logo | ||
Gesamt 8 Seiten 2N7002
N-Channel Advanced Power MOSFET
Features
• 60V/0.5A,
RDS (ON) =4500mΩ(Typ.)@VGS=10V
RDS (ON) =5250mΩ(Typ.)@VGS=4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management in Desktop Computer or DC/DC Converters
Pin Description
D
G
S
SOT23
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC
RθJA③
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TA=25°C
60
±20
150
-55 to 150
1.25
V
°C
°C
A
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
2A
0.5
A
0.4
1
W
0.64
- °C/W
125 °C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
1
www.ruichips.com
Avalanche Test Circuit and Waveforms
2N7002
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
6
www.ruichips.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 2N7002 Schematic.PDF ] |
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