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Teilenummer | CEB140N10 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP140N10/CEB140N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous @ TC = 25 C
Drain Current-Continuous @ TC = 100 C
Drain Current-Pulsed a
ID
IDM
137
87
548
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
208
1.7
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
800
40
-55 to 150
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.6
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2012.July.
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEB140N10 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CEB140N10 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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