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PDF WCD4C60 Data sheet ( Hoja de datos )
| Número de pieza | WCD4C60 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Winsemi | |
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Hay una vista previa y un enlace de descarga de WCD4C60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Features
� Repetitive Peak Off-State Voltage : 600V
� R.M.S On-State Current ( IT(RMS)= 4 A )
� Low On-State Voltage (1.6V(Typ.) @ ITM)
� Isolation Voltage(VISO=1500V AC)
WCD4C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
Condition
Ti =60 °C
Tamb=25 °C
IT(RMS)
ITSM
I2t
di/dt
PGM
R.M.S On-State Current(180° Conduction
Angle)
Surge On-State Current
I2t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Ti =60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
t =10ms
F=60Hz,Tj=125 °C
PG(AV) Forward Average Gate Power Dissipation Tj=125 °C
IFGM
VISO
TJ
TSTG
Forward Peak Gate Current
Isolation Breakdown voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
A,C.1minute
Ratings
600
1.35
0.9
4
1.35
Units
V
A
A
33 A
4.5
50
0.5
0.2
1.2
1500
-40~125 °C
-40~150 °C
A2s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
℃/W
℃/W
1 page  
TO-252 Package Dimension
WCD4C60
Unit: mm
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WCD4C60.PDF ] | |
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