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PDF WCD12C60 Data sheet ( Hoja de datos )
| Número de pieza | WCD12C60 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WCD12C60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Features
� Repetitive Peak Off-State Voltage:600V
� R.M.S On-State Current (IT(RMS)=12A)
� Low On-State Voltage(1.4V(Typ.)@ITM)
� Non-isolation Type
WCD12C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
ITSM Surge on-state Current
I2t I2t for Fusing
Condition
Half Sine Wave:TC =111 °C
180°conduction Angle
1/2 Cycle,60Hz,Sine Wave
Non-Repetitive
t=8.3ms
di/dt Critical rate of rise of on-state current
PGM Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation Over any 20ms period
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Value
600
7.6
12
120
72
50
5
0.5
2
5.0
-40~125
-40~150
Units
V
A
A
A
A2s
A/㎲
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
- - 1.3 ℃/W
- - 60 ℃/W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
1 page  
TO-252 Package Dimension
WCD12C60
Unit: mm
Steady, keep you advance
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet WCD12C60.PDF ] | |
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