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Teilenummer | WBP3308 |
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Beschreibung | NPN Power Transistor | |
Hersteller | Winsemi | |
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Gesamt 6 Seiten WBP3308
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High
speed switching characteristics required such as
lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE=0
IB=0
IC=0
(Note)
Value
900
500
7
7
14
3
45
150
-55~150
Units
V
V
V
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
Value
2.78
Units
℃/W
Rev.A02 Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
To-220 Package Dimension
WBP3308
Unit:mm
Steady, keep you advance
6/6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WBP3308 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WBP3306 | NPN Power Transistor | Winsemi |
WBP3308 | NPN Power Transistor | Winsemi |
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