(PDF) WBP13005D Datasheet - NPN Power Transistor

Número de pieza	WBP13005D
Descripción	NPN Power Transistor
Fabricantes	Winsemi
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No Preview Available ! WBP13005D High Voltage Fast -Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA � Built-in free wheeling diode General Description This Device is designed for high Voltage, High speed switching Characteristics required such as lighting system ,switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector pulse Current IB Base Current IBM Base peak Current PC Total Dissipation TJ Operation Junction Temperature TSTG Storage Temperature Test conditions VBE=0 IB=0 IC=0 tP=5ms Value 700 400 9.0 4 8 2 4 75 150 -55~150 Units V V V A A A A W ℃ ℃ Thermal characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Value 3.12 8.9 Units ℃/W ℃/W Rev.A Aug.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 1 page TO-220HW Package Dimension WBP13005D Unit:mm Steady, keep you advance 5/5 5 Page

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PDF WBP13005D Data sheet ( Hoja de datos )