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A2017 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer A2017
Beschreibung Power Transistor
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 1 Seiten
A2017 Datasheet, Funktion
Transistors
Power Transistor (80V, 4A)
2SA2017
!Features
1) Low VCE(sat). (Typ. –0.3V at IC/IB = 2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SC5574.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
-80
-80
-5
-4
-6
30
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W(Tc = 25°C)
°C
°C
2SA2017
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA2017
TO-220FN
E
-
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VCE(sat)
hFE
fT
Cob
Min.
80
80
5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-
-
12
80
Max.
-
-
-
10
10
1.5
1.5
200
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Conditions
IC = 1mA
IC = 50µA
IE = 50µA
VCB = 80V
VEB = 4V
IC/IB = 2A/0.2A
IC/IB = 2A/0.2A
VCE/IC = 4V/1A
VCE = 12V , IE = 0.5A
VCB = 10V , IE = 0A , f = 1MHz





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