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PDF K2611B Data sheet ( Hoja de datos )
| Número de pieza | K2611B | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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K2611B Product Description
Silicon N-Channel MOSFET
Features
� 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
� Ultra-low Gate charge(Typical 66nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Improved dv/dt capability
� RoHS product
General Description
This N-Channel enhancement mode power field effect transistors are
produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance , provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
900
11
6.9*
44
±30
970
11
30.1
4.1
277
2.22
150
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
℃
Value
Min Typ Max
- - 0.45
- - 40
Units
℃/W
℃/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F055-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS
1 page  
K2611B Product Description
Silicon N-Channel MOSFET
Same type
50K Ω as DUT
12V 200nF
300nF
VG S
10V
Qg
VG S VD S Qg s Qg d
DUT
3m A
Charge
Fig.12 Gate Test circuit & Waveform
10V
VD S
VG S
RG
RL
VD D
DUT
VD S 9 0 %
VG S 1 0 %
td(on) tr
to n
td ( o ff)
tf
to ff
Fig.13 Resistive Switching Test Circuit & Waveform
VD S
ID
RG
L
EA S =
1
2
L IA S 2
B VDSS
B V D S S- VD D
B VDSS
IA S
VD D ID( t)
10V
tp
DUT
VD D VD S(t)
tp T i m e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2611B.PDF ] | |
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