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NIS5135 Schematic ( PDF Datasheet ) - Diodes

Teilenummer NIS5135
Beschreibung 3.6A 5V RESETTABLE ELECTRONIC FUSE
Hersteller Diodes
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Gesamt 13 Seiten
NIS5135 Datasheet, Funktion
NIS5135
3.6A 5V RESETTABLE ELECTRONIC FUSE
Description
The NIS5135 is a self-protected resettable electronic fuse designed
for consumer applications such as hard disk drives to industrial
applications to enhance system reliability against catastrophic and
shutdown failures.
To support a wide range of demanding applications, the design has
been optimized to operate over the supply range of 3.1V to 18V. For
robustness and protection, the device integrates a low RDS(ON)
NMOS buffer power device along with an undervoltage lockout,
overvoltage clamp, a current limit, a dv/dt control and a thermal
shutdown circuit. The overvoltage circuit limits the output voltage
without shutting the device down to allow the load to continue
operating during overvoltage. Thermal shutdown can be either
latching type (NIS5135MN1) or auto-retry type (NIS5135MN2).
Pin Assignments
(Top View)
Source 1
Source 22
Source 3
Source 4
Source 5
NIS5135MN1
NIS5135MN2
10 GND
29 dv/dt
8 Enable/Fault
7 ILIMIT
6 NC
U-DFN3030-10
Features
3.1V to 18V Operating Input Voltage
Integrated NMOS Power Device with RDS(ON) of 30mΩ Typical
Internal Current Limit - No External Current Sense Resistor in
Load Path
Undervoltage Lockout
Over Voltage Clamp (NIS5135MN1 and NIS5135MN2)
Thermal Shutdown
-40C to +150C Operating Junction Temperature
ESD Ratings: HBM > 1500V; MM 200V
Small Low Profile U-DFN3030-10 package
Totally Lead Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Hard Disk Drives
Solid State Drives (SSD)
Set-top Boxes
DVDs and Blu-ray Disc Drivers
Mother Board Power Management
Printer Load Power Management
Fan Drives
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green” and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
NIS5135
Document number: DS37968 Rev. 3 2
1 of 13
www.diodes.com
May 2016
© Diodes Incorporated






NIS5135 Datasheet, Funktion
NIS5135
Electrical Characteristics (VDD = 5V, CL = 70µF, dv/dt pin open, RLIMIT = 10, and TA = +25°C, unless otherwise noted.)
Symbol
Characteristic
Test Condition
Min
Device
IBIAS
IBIAS_SD
VDD_MIN
Bias Current
Bias Current during Shutdown
Minimum Operating Voltage Once
Successfully Started Up
Device Operational
Device Shutdown
NMOS Power Device
tDLY Chip Enable Dealy Time
Enabling of the IC to ID = 100mA
(with 1A resistive load)
RDS(ON)
VOUT_OFF
NMOS Drain to Source Kelvin ON
Resistance (Note 8)
Off State Output Voltage
ID Continuous Current (Note 9)
Output Capacitance
dv/dt Ramp
NMOS fully on
NMOS fully on, TJ = +140°C
VDD = 10V, VGS = 0V, RL =
TA = +25°C, 0.5 in.2 pad
TA = +80°C, min copper
VDS = 12V, VGS = 0V, f = 1MHz
20
tSLEW Output Voltage Ramp Time
VC_MAX Maximum Capacitor Voltage
Under/Overvoltage Protection
Device enable to VDS = 11.7V
0.7
VUVLO Undervoltage Lockout Threshold
VUVLO_HYST Undervoltage Lockout Hysteresis
VCLAMP Overvoltage Clamp Limit (Note 10)
Current Limit
Turn on, Voltage rising
During over voltage protection,
VDD = 18V
3.2
5.95
Kelvin Short Circuit Current Limit
ILIMIT_SS (Note 11)
RLIMIT = 11
2.3
Kelvin Over Load Current Limit
ILIMIT_OL (Note 11)
RLIMIT = 11
Thermal Protection
TSD
Thermal Shutdown Junction Temperature
Threshold (Note 9)
Temperature rising
+150
TSD_HYST
Thermal Shutdown Hysteresis in Non
Latching Devices
Enable/Fault
VEN_LOW
VEN_MID
VEN_HI
VEN_MAX
IEN_SINK
IEN_LKG
Fanout
Enable Logic Level Low Voltage
Output disabled
Enable Logic Level Mid Voltage
Output disabled, Thermal fault
Enable Logic Level High
High State Maximum Voltage
Output enabled
Logic Low Sink Current
VENABLE = 0V
Logic High Leakage Current for External
Switch
VENABLE = 3.3V
Maximum Fanout Number of device that
can be connected together to this pin for
simultaneous shutdown
0.35
0.82
1.96
3.4
Notes:
8. Pulse test with pulse width of 300µs, duty cycle 2%.
9. This parameter is not tested in production. It is guaranteed by design, process control and characterization.
10. Overvoltage clamp feature is available on in NIS5135MN1 and NIS5135MN2 versions.
11. Refer to application note on explanation on short circuit and overload conditions.
Typ
0.8
0.4
220
30
45
0.05
3.6
1.7
230
1.4
3.6
0.40
6.65
3.1
3.5
+175
+45
0.58
1.4
2.64
4.3
-12
Max
1.5
3.1
40
0.2
2.4
VDD
4.0
7.35
4.4
+200
0.81
1.95
3.3
5.3
-20
1.0
3.0
Unit
mA
mA
V
µs
m
V
A
pF
ms
V
V
V
V
A
A
C
C
V
V
V
V
µA
µA
Units
NIS5135
Document number: DS37968 Rev. 3 2
6 of 13
www.diodes.com
May 2016
© Diodes Incorporated

6 Page









NIS5135 pdf, datenblatt
Suggested Pad Layout
(1) Package Type: U-DFN3030-10
Y
C
X
Z
X1
G
G
Taping Orientation
(1) Package Type: U-DFN3030-10
NIS5135
Dimensions Value (in mm)
Z 2.60
G 0.15
X 1.80
X1 0.60
Y 0.30
C 0.50
Note: 12. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf.
NIS5135
Document number: DS37968 Rev. 3 2
12 of 13
www.diodes.com
May 2016
© Diodes Incorporated

12 Page





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