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PDF MJD31CQ Data sheet ( Hoja de datos )

Número de pieza MJD31CQ
Descripción 100V NPN HIGH VOLTAGE TRANSISTOR
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No Preview Available ! MJD31CQ Hoja de datos, Descripción, Manual

NOT RECOMMENDED FOR NEW DESIGN
USE MJD31CUQ
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > 100V
IC = 3A high Continuous Collector Current
ICM = 5A Peak Pulse Current
Ideal for Power Switching or Amplification Applications
Complementary PNP Type: MJD32CQ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
MJD31CQ
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
C
B
Top View
E
Device Schematic
Pin Out Configuration
Top View
Ordering Information (Notes 4 & 5)
Product
MJD31CQ-13
Compliance
Automotive
Marking
MJD31C
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MJD31C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 53)
MJD31CQ
Document number: DS37049 Rev. 3 - 3
1 of 7
www.diodes.com
November 2016
© Diodes Incorporated

1 page




MJD31CQ pdf
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
TA = 150°C
TA = 85°C
TA = 25°C
100
TA = -55°C
VCE = 4V
1
IC/IB = 8
0.1
MJD31CQ
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
1.2
VCE = 4V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.01
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 8
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Figure 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
Cibo
10
Cobo
1
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
MJD31CQ
Figure 5 Typical Capacitance Characteristics 5 of 7
Document number: DS37049 Rev. 3 - 3
www.diodes.com
November 2016
© Diodes Incorporated

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