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PDF MCP660 Data sheet ( Hoja de datos )
| Número de pieza | MCP660 | |
| Descripción | Rail-to-Rail Output (RRO) Op Amps | |
| Fabricantes | Microchip | |
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MCP660/1/2/3/4/5/9
60 MHz, 32 V/µs Rail-to-Rail Output (RRO) Op Amps
Features:
• Gain-Bandwidth Product: 60 MHz (typical)
• Slew Rate: 32 V/µs (typical)
• Noise: 6.8 nV/Hz (typical, at 1 MHz)
• Short Circuit Current: 90 mA (typical)
• Low Input Bias Current: 4 pA (typical)
• Ease of Use:
- Unity-Gain Stable
- Rail-to-Rail Output
- Input Range including Negative Rail
- No Phase Reversal
• Supply Voltage Range: +2.5V to +5.5V
• High Output Current: ±70 mA
• Supply Current: 6.0 mA/ch (typical)
• Low-Power Mode: 1 µA/ch
• Small Packages: SOT23-5, DFN
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• Multi-Pole Active Filter
• Driving A/D Converters
• Power Amplifier Control Loops
• Line Driver
• Video Amplifier
• Barcode Scanners
• Optical Detector Amplifier
Design Aids:
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
- MCP661DM-LD
• Application Notes
Description:
The Microchip Technology Inc. MCP660/1/2/3/4/5/9
family of operational amplifiers (op amps) features high
gain-bandwidth product and high slew rate. Some also
provide a Chip Select pin (CS) that supports a low-
power mode of operation. These amplifiers are
optimized for high speed, low noise and distortion,
single-supply operation with rail-to-rail output and an
input that includes the negative rail.
This family is offered in single (MCP661), single with
CS pin (MCP663), dual (MCP662) and dual with two
CS pins (MCP665), triple (MCP660), quad (MCP664)
and quad with two CS pins (MCP669). All devices are
fully specified from -40°C to +125°C.
Typical Application Circuit
VREF
RG
RF
-
VIN +
RISO
CL
MCP66X
VOUT
RL
100
10
GN = +1
GN
1
1.1E0-p11
11.E0-01p0
1.E1-n09
Normalized Capacitance; CL/GN (F)
1.1E0-n08
High Gain-Bandwidth Op Amp Portfolio
Model Family
Channels/Package Gain-Bandwidth
MCP621/1S/2/3/4/5/9
MCP631/2/3/4/5/9
MCP651/1S/2/3/4/5/9
MCP660/1/2/3/4/5/9
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
20 MHz
24 MHz
50 MHz
60 MHz
VOS (max.)
0.2 mV
8.0 mV
0.2 mV
8.0 mV
IQ/Ch (typ.)
2.5 mA
2.5 mA
6.0 mA
6.0 mA
2009-2014 Microchip Technology Inc.
DS20002194E-page 1
1 page  
MCP660/1/2/3/4/5/9
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 1 k to VL, CL = 20 pF and CS = VSS (refer to Figures 1-1 and 2-1).
Parameters
Sym. Min. Typ. Max. Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
VIL VSS — 0.2VDD V
ICSL — -0.1 — nA CS = 0V
CS High Specifications
CS Logic Threshold, High
VIH 0.8VDD —
VDD
V
CS Input Current, High
GND Current
ICSH — -0.7 — µA CS = VDD
ISS -2 -1 — µA
CS Internal Pull-Down Resistor RPD
—
5
— M
Amplifier Output Leakage
IO(LEAK) — 40 — nA CS = VDD, TA = +125°C
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High Z)
VHYST
tOFF
—
—
0.25
200
—
—
CS Low to Amplifier On Time tON — 2 10
V
ns G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
µs G = +1 V/V, VL = VSS
CS = 0.2VDD to VOUT = 0.9(VDD/2)
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C
TA -40 — +125 °C Note 1
TA -65 — +150 °C
Thermal Resistance, 5L-SOT-23
θJA — 201.0 — °C/W
Thermal Resistance, 6L-SOT-23
θJA — 190.5 — °C/W
Thermal Resistance, 8L-3x3 DFN
θJA — 56.7 — °C/W Note 2
Thermal Resistance, 8L-MSOP
θJA — 211 — °C/W
Thermal Resistance, 8L-SOIC
θJA — 149.5 — °C/W
Thermal Resistance, 8L-2x3 TDFN
θJA — 52.5 — °C/W
Thermal Resistance, 10L-3x3 DFN
θJA — 54.0 — °C/W Note 2
Thermal Resistance, 10L-MSOP
θJA — 202 — °C/W
Thermal Resistance, 14L-SOIC
θJA — 90.8 — °C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 — °C/W
Thermal Resistance, 16L-QFN
θJA — 52.1 — °C/W
Note 1: Operation must not cause TJ to exceed the Maximum Junction Temperature specification (+150°C).
2: Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias.
2009-2014 Microchip Technology Inc.
DS20002194E-page 5
5 Page 
MCP660/1/2/3/4/5/9
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kto VL, CL = 20 pF and CS = VSS.
2.3 Frequency Response
100
90
80
70
60
50
40
30
20
1011.E0+02
1.1Ek+3
FIGURE 2-21:
Frequency.
CMRR
PSRR+
PSRR-
11.E0+k4
11.0E0+k5
Frequency (Hz)
11.EM+6
11.0EM+7
CMRR and PSRR vs.
80
75
70
65 PM
60
55
50
45 GBWP
40
VDD = 5.5V
VDD = 2.5V
80
75
70
65
60
55
50
45
40
Common Mode Input Voltage (V)
FIGURE 2-24:
Gain-Bandwidth Product
and Phase Margin vs. Common-Mode Input
Voltage.
140 0
120 -30
100 -60
80
AOL
-90
60 -120
40 -150
20
| AOL |
-180
0 -210
-201.1E+ 11.E0+ 11.0E0+ 11.Ek+ 11.0Ek+ 110.E0+k 11.ME+ 110.EM+ 110.E0+M11.EG+-240
0 1 2 F3requ4enc5y (Hz6) 7 8 9
FIGURE 2-22:
Frequency.
Open-Loop Gain vs.
80 80
75 75
70 70
65 PM 65
60 VDD = 5.5V
55 VDD = 2.5V
60
55
50 50
45 GBWP 45
40
-50
-25 0 25 50 75 100
Ambient Temperature (°C)
40
125
FIGURE 2-23:
Gain-Bandwidth Product
and Phase Margin vs. Ambient Temperature.
80 80
75 75
70
PM
65
60
VDD = 5.5V
VDD = 2.5V
70
65
60
55 55
50 GBWP
45
50
45
40 40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-25:
Gain-Bandwidth Product
and Phase Margin vs. Output Voltage.
100
10 G = 101 V/V
G = 11 V/V
G = 1 V/V
1
01..101E0+k04
1.01E00+k05 1.01EM+06 1.01E0+M07
Frequency (Hz)
1.100E0+M08
FIGURE 2-26:
Closed-Loop Output
Impedance vs. Frequency.
2009-2014 Microchip Technology Inc.
DS20002194E-page 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MCP660.PDF ] | |
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