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PDF BDW42G Data sheet ( Hoja de datos )
| Número de pieza | BDW42G | |
| Descripción | Darlington Complementary Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BDW42G (NPN),
BDW46G, BDW47G (PNP)
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
• Monolithic Construction with Built−In Base Emitter Shunt resistors
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Collector-Base Voltage
BDW46
BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
80
100
80
100
5.0
15
0.5
85
0.68
−55 to +150
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
RqJC
Max
1.47
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 17
www.onsemi.com
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
BDWxx
AYWWG
BDWxx =
A=
Y=
WW =
G=
Device Code
x = 42, 46, or 47
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BDW42G
TO−220
(Pb−Free)
50 Units/Rail
BDW46G
BDW47G
TO−220
(Pb−Free)
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
Publication Order Number:
BDW42/D
1 page  
BDW42G (NPN), BDW46G, BDW47G (PNP)
BDW42 (NPN)
BDW46, 47 (PNP)
20,000
10,000
5000 TJ = 150°C
3000
2000 25°C
1000
- 55°C
500
300
200
0.1
0.2 0.3 0.5 0.7 1.0
VCE = 3.0 V
20,000
10,000
7000
5000
3000
2000
TJ = 150°C
25°C
2.0 3.0 5.0 7.0 10
1000
700
500
300
200
0.1
- 55°C
0.2 0.3 0.5 0.7 1.0
VCE = 3.0 V
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
3.0
2.6
IC = 2.0 A 4.0 A
2.2
1.8
6.0 A
TJ = 25°C
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
20 30
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
1.5 VBE(sat) @ IC/IB = 250
1.5 VBE @ VCE = 4.0 V
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.0 VBE(sat) @ IC/IB = 250
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 11. “On” Voltages
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BDW42G.PDF ] | |
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