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PDF SP8M4FRA Data sheet ( Hoja de datos )
| Número de pieza | SP8M4FRA | |
| Descripción | 30V Nch+Pch Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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SP8M4FRA
30V Nch+Pch Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
18mΩ 28mΩ
±9.0A ±7.0A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) AEC-Q101 Qualified
lOutline
SOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
SP8M4
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS
30 -30
V
ID
±9.0 ±7.0
A
IDP*1
±36 ±28
A
VGSS
±20 ±20
V
PD*2 2.0
W
PD*3 1.4
Tj 150 ℃
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/19
20161019 - Rev.001
1 page  
SP8M4FRA
lElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/19
20161019 - Rev.001
5 Page 
SP8M4FRA
lElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/19
20161019 - Rev.001
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet SP8M4FRA.PDF ] | |
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