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PDF RWP25020-50 Data sheet ( Hoja de datos )
| Número de pieza | RWP25020-50 | |
| Descripción | Wideband Power Amplifier | |
| Fabricantes | RFHIC | |
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Wideband Power Amplifier
Product Features
• GaN on SiC Broadband High Power Amplifier
• 2000 ~ 3000MHz Operation Bandwidth
• Small Signal Gain 22dB min.
• 20W Minimum, P3dB
RWP25020-50
Applications
• General Purpose
• Telecommunication
Description
Package Type : DP-75
The power amplifier module is designed for General Purpose.
Operating frequency range is from 2000 ~ 3000MHz
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband performance
is already applied. Improved thermal handling by patented technology.
Electrical Specifications @ VCC = 28V; T = 25°C; ZS = ZL = 50Ω
PARAMETER
Bandwidth
UNIT
MHz
MIN
2000
TYP
-
Power Gain
dB 21
22
Gain Flatness
dBp-p
-
±1
Gain Variation vs Temperature
dB -2.0
-
Output power
dBm 42
43
Input VSWR
dB -
-6
Output VSWR
dB -
-6
Supply Voltage
V 27.5
28
Quiescent Current Consumption
A
-
2.5
Supply Current (IDD)
A-
2.8
On/Off Switch Time
uS -
2
Shut Down,
Switch On/Off
0
V
2.5
-
MAX
3000
-
±2
+2.0
-
-
-
28.5
-
3.5
5.0
0.5
5.5
CONDITION
-
@Pin 21dBm
@Pin 21dBm
-20 ~ 60°C
@Pin 21dBm
-
-
Vcc(=Vds)
-
@Pin 21dBm
On: TTL "Low"
Off: TTL "High"(0.2A@Disable)
On: TTL "Low"
Off: TTL "High"
Absolute Maximum Ratings
PARAMETER
Drain Voltage
Operating Flange Temperature
Storage Temperature
UNIT
V
°C
°C
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
RATING
30
-20 ~ 85
-30 ~ 90
SYMBOL
VDS
Tc
Tstg
All specifications may change without notice
1 / 6 Version 1.3
1 page  
Wideband Power Amplifier
RWP25020-50
SMA Connectorized Housing Dimensions
GND
Korean Facilities : 82-31-250-5078 / [email protected]
US Facility : 919-677-8780 / [email protected]
5/6
All specifications may change without notice
Version 1.3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RWP25020-50.PDF ] | |
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