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MTB1D5N03H8 Schematic ( PDF Datasheet ) - Cystech Electonics

Teilenummer MTB1D5N03H8
Beschreibung N-Channel Enhancement Mode Power MOSFET
Hersteller Cystech Electonics
Logo Cystech Electonics Logo 




Gesamt 10 Seiten
MTB1D5N03H8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C984H8
Issued Date : 2017.01.06
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB1D5N03H8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V
156A(silicon limit)
84A(package limit)
23.5A
1.3mΩ(typ)
1.6mΩ(typ)
Symbol
MTB1D5N03H8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB1D5N03H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D5N03H8
CYStek Product Specification






MTB1D5N03H8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C984H8
Issued Date : 2017.01.06
Revised Date :
Page No. : 6/ 10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C oss
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
0.8
0.6
ID=250μA
0.4
100
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100 10
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
1000
100
RDS(ON)
Limited
Maximum Safe Operating Area
100μs
10
1 TC=25°C, Tj=175°C,
VGS=10V, RθJC=1.2°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
1ms
10ms
DC
100
8 VDS=15V
6
VDS=20V
4
2
ID=20A
0
0 20 40 60 80 100 120 140 160
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
180
160 Silicon Limit
140
120
100
80
60 Package Limit
40
20 VGS=10V, RθJC=1.2°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB1D5N03H8
CYStek Product Specification

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