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MTB15A04DH8 Schematic ( PDF Datasheet ) - Cystech Electonics

Teilenummer MTB15A04DH8
Beschreibung Dual N-Channel Enhancement Mode Power MOSFET
Hersteller Cystech Electonics
Logo Cystech Electonics Logo 




Gesamt 11 Seiten
MTB15A04DH8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 1/ 11
Dual N-Channel Enhancement Mode Power MOSFET
MTB15A04DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
ID@VGS=10V, TA=70°C
Low On Resistance
RDS(ON)@VGS=10V, ID=8A
Simple Drive Requirement
Low Gate Charge
RDS(ON)@VGS=4.5V, ID=4A
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
40V
26A
16.4A
7.0A
5.6A
11.3mΩ(typ)
14.2mΩ(typ)
Equivalent Circuit
MTB15A04DH8
Outline
Pin 1
DFN5×6
Pin 1
GGate DDrain SSource
Ordering Information
Device
MTB15A04DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB15A04DH8
CYStek Product Specification






MTB15A04DH8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 6/ 11
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
NormalizedThreshold Voltage vs Junction Tempearture
1.4
Ciss 1.2
ID=1mA
1
C oss
100
0.8
Crss ID=250μA
0.6
10
0
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
1000
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
100
RDS(ON)
Limited
10
1
0.1
TA=25°C, Tj=150°C,
VGS=10V,RθJA=85°C/W,
Single Pulse
0.01
0.01 0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
8
VDS=15V
6
4 VDS=20V
2
ID=8A
0
0 2 4 6 8 10 12 14 16
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2
VGS=10V, RθJA=85°C/W
1
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB15A04DH8
CYStek Product Specification

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SeitenGesamt 11 Seiten
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