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Número de pieza | MTB15A04Q8 | |
Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB15A04Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTB15A04Q8 BVDSS
ID@ VGS=10V, TC=25°C
ID@ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & halogen-free package
RDSON@VGS=4.5V, ID=4A
40V
14.5A
8.8A
12.3mΩ(typ)
15.4mΩ(typ)
Equivalent Circuit
MTB15A04Q8
Outline
SOP-8
D2
D2
D1
D1
G:Gate S:Source D:Drain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB15A04Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB15A04Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
ID=1mA
C oss
100
Crss
10
0
10
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1 VDS=15V
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
0.1 TA=25°C, Tj=175°C
VGS=10V, RθJA=62.5°C/W
Single Pulse
0.01
0.01 0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
4
2 VDS=20V
ID=8A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2 TA=25°C, VGS=10V,
RθJA=62.5°C/W
1
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
200
MTB15A04Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB15A04Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB15A04Q8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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