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What is MTB150N10N3?

This electronic component, produced by the manufacturer "Cystech Electonics", performs the same function as "N-Channel Enhancement Mode Power MOSFET".


MTB150N10N3 Datasheet PDF - Cystech Electonics

Part Number MTB150N10N3
Description N-Channel Enhancement Mode Power MOSFET
Manufacturers Cystech Electonics 
Logo Cystech Electonics Logo 


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No Preview Available ! MTB150N10N3 datasheet, circuit

CYStech Electronics Corp.
100V N-Channel Enhancement Mode MOSFET
MTB150N10N3
Spec. No. : C731N3
Issued Date : 2016.12.12
Revised Date :
Page No. : 1/9
Features
Simple drive requirement
Small package outline
Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
RDSON@VGS=10V, ID=1.6A
RDSON@VGS=4.5V, ID=1.3A
100V
1.9A
128mΩ(typ)
135mΩ(typ)
Symbol
MTB150N10N3
Outline
SOT-23
D
GGate SSource DDrain
S
G
Ordering Information
Device
Package
Shipping
MTB150N10N3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB150N10N3
CYStek Product Specification

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MTB150N10N3 equivalent
CYStech Electronics Corp.
Spec. No. : C731N3
Issued Date : 2016.12.12
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2 ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
4
VDS=80V
2
ID=1.6A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
2.5
10
RDS(ON)
Limited
1
100μs
1ms
0.1 TA=25°C, Tj=150°, VGS=10V
RθJA=100°C/W, Single Pulse
10ms
100ms
0.01
0.01
DC
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
2
1.5
1
0.5
TA=25°C, VGS=10V, RθJA=100°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB150N10N3
CYStek Product Specification


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MTB150N10N3 electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
MTB150N10N3The function is N-Channel Enhancement Mode Power MOSFET. Cystech ElectonicsCystech Electonics

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