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MTB11N03Q8 Schematic ( PDF Datasheet ) - Cystech Electonics

Teilenummer MTB11N03Q8
Beschreibung N-Channel Enhancement Mode Power MOSFET
Hersteller Cystech Electonics
Logo Cystech Electonics Logo 




Gesamt 9 Seiten
MTB11N03Q8 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03Q8
BVDSS
ID
RDSON(max)
30V
16A
8.5mΩ
Description
The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free and Halogen-free package
Symbol
MTB11N03Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB11N03Q8
CYStek Product Specification






MTB11N03Q8 Datasheet, Funktion
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
120
VDS=10V
100
80
60
40
20
0
0
10
2 4 6 8 10
VGS, Gate-Source Voltage(V)
12
Transient Thermal Response Curves
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 6/9
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
1.E-03
Single Pulse
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125°C/W
1.E+01
1.E+02
1.E+03
MTB11N03Q8
CYStek Product Specification

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