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PDF MTB115P10KJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTB115P10KJ3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB115P10KJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTB115P10KJ3
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-4.5V, ID=-8A
-100V
-15A
82mΩ(typ)
107mΩ(typ)
Equivalent Circuit
MTB115P10KJ3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB115P10KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB115P10KJ3
CYStek Product Specification
1 page  
Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Typical Characteristics (Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
10
0
f=1MHz
Crss
10 20 30 40
-VDS, Drain-Source Voltage(V)
50
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1 TC=25°C, Tj=175°C,
VGS=-10V, RθJC=3°C/W,
single pulse
0.01
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
18
16
14
12
10
8
6
4 VGS=-10V, Tj(max)=175°C,
2 RθJC=3°C/W, single pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
0
0
100
VDS=-50V
ID=-13A
4 8 12 16 20
Qg, Total Gate Charge(nC)
24
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
100
MTB115P10KJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB115P10KJ3.PDF ] | |
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