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PDF MTB028N10QNCQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB028N10QNCQ8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB028N10QNCQ8
Spec. No. : C168Q8
Issued Date : 2016.11.18
Revised Date : 2016.11.22
Page No. : 1/9
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4A
RDS(ON)@VGS=4.5V, ID=3A
100V
6.6A
19.3 mΩ(typ)
27.0mΩ(typ)
Symbol
MTB028N10QNCQ8
Outline
DD
SOP-8
DD
G：Gate D：Drain S：Source
NC : Not Connected
Pin 1
G
S NC S
Ordering Information
Device
MTB028N10QNCQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB028N10QNCQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C168Q8
Issued Date : 2016.11.18
Revised Date : 2016.11.22
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
f=1MHz
Threshold Voltage vs Junction Tempearture
1.4
1.2
1000
Ciss
1.0
ID=1mA
100
Crss
C oss
10
0
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1
0.1
0.01
0.001
VDS=15V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1 1ms
10ms
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8
6 VDS=50V
4 VDS=80V
2
ID=4A
0
0 5 10 15 20 25 30
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
8
6
4
2
TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB028N10QNCQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB028N10QNCQ8.PDF ] | |
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