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Teilenummer | MTB012N10RQ8 |
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Beschreibung | N-Channel Enhancement Mode Power MOSFET | |
Hersteller | Cystech Electonics | |
Logo | ||
Gesamt 9 Seiten CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
10A
10.3 mΩ(typ)
12.3 mΩ(typ)
Symbol
MTB012N10RQ8
Outline
SOP-8
D
D
D
D
G:Gate
D:Drain
S:Source
Pin 1
G
S
S
S
Ordering Information
Device
MTB012N10RQ8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB012N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056Q8
Issued Date : 2016.08.26
Revised Date : 2016.11.08
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
36 VDS=10V
32
28
24
20
16
12
8
4
0
0 1 23 4 5 6 78
VGS, Gate-Source Voltage(V)
9 10
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250 TA=25°C
RθJA=40°C/W
200
150
100
50
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
Transient Thermal Response Curves
10
1
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB012N10RQ8
CYStek Product Specification
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ MTB012N10RQ8 Schematic.PDF ] |
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MTB012N10RQ8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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