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PDF CJ5853DC Data sheet ( Hoja de datos )
| Número de pieza | CJ5853DC | |
| Descripción | P-channel MOSFET and Schottky Barrier Diode | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJ5853DC (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DC P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V
20V
RDS(on)MAX
110mΩ@-4.5V
160mΩ@-2.5V
240mΩ@-1.8V
/
ID/IO
-2.7A
1A
DFNWB3×2-08L-B
C
D
FEATURES
APPLICATIONS
z Independent Pinout to Each Device to Ease Circuit Design z Li-lon Battery Charging
z Ultra low VF
z High Side DC-DC Conversion Circuits
z Including a CJ2301 MOSFET and a MBR0520 Schottky
(independently) in a package
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable，
Battery Powered Products
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
VDS
VGS
ID
IDM*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-2.7
-10
20
20
1
1.1
114
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
E,May,2015
1 page  
DFNWB3X2-8L-B Package Outline Dimensions
1
1
1 1
DFNWB3X2-8L-B
www.cj-elec.com
5
E,May,2015
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CJ5853DC.PDF ] | |
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