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Teilenummer | GW30NC120HD |
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Beschreibung | STGW30NC120HD | |
Hersteller | STMicroelectronics | |
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Gesamt 13 Seiten STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
■ Low on-losses
■ Low on-voltage drop (Vcesat)
■ High current capability
■ High input impedance (voltage driven)
■ Low gate charge
■ Ideal for soft switching application
Application
■ Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
13
Electrical characteristics
STGW30NC120HD
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Transfer characteristics
Figure 4. Transconductance
Figure 5. Collector-emitter on voltage
vs. temperature
Figure 6. Gate charge vs. gate-source Figure 7. Capacitance variations
voltage
6/13
6 Page Revision history
5 Revision history
STGW30NC120HD
Table 9. Document revision history
Date
Revision
Changes
23-Nov-2005
1 First issue.
17-Mar-2006
2 Complete version
05-May-2006
3 Modified value on Table 2.: Absolute maximum ratings
30-May-2006
4 New values onTable 3: Thermal resistance
23-Jun-2006
5 Modified value on Table 4.: Static
07-Sep-2006
6
Modified TJ temperature range to 150°C in
Table 2.: Absolute maximum ratings
14-Nov-2006
7 Modified Figure 5. and Figure 9.
26-Jan-2007
8 Typing error on first page.
04-Oct-2007
9 Modified test conditions in Table 4.: Static
12/13
12 Page | ||
Seiten | Gesamt 13 Seiten | |
PDF Download | [ GW30NC120HD Schematic.PDF ] |
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