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PDF VP2450 Data sheet ( Hoja de datos )
| Número de pieza | VP2450 | |
| Descripción | P-Channel Enhancement-Mode Vertical DMOS FET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VP2450 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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VP2450
P-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• High Input Impedance and High Gain
• Excellent Thermal Stability
• Integral Source-drain Diode
Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers: Relays, Hammers, Solenoids, Lamps,
Memory, Displays, Bipolar Transistors, etc.
General Description
The VP2450 is a low-threshold, Enhancement-mode
(normally-off) transistor that utilizes a vertical
Double-diffused Metal-Oxide Semiconductor (DMOS)
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
This Vertical DMOS Field-Effect Transistor (FET) is
ideally suited to a wide range of switching and
amplifying applications where very low threshold
voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Package Types
TO-92
SOURCE
DRAIN
See Table 3-1 for pin information.
GATE
SOT-89
DRAIN
SOURCE
DRAIN
GATE
2016 Microchip Technology Inc.
DS20005569A-page 1
1 page  
VP2450
-1.0 VGS = -10V
VGS = -4.5V
-0.8
VGS = -6.0V
-0.6 VGS = -3.5V
-0.4
-0.2
0
0
FIGURE 2-7:
-10 -20 -30 -40 -50
VDS (volts)
Output Characteristics.
1.0
VDS = -20V
0.8
0.6
0.4
0.2
TA = -55OC
25OC
125OC
0
0
-100
-200
-300
-400
-500
ID (milliamperes)
FIGURE 2-8:
Current.
Transconductance vs. Drain
-1.0
TO-243AA (pulsed)
TO-92 (pulsed)
TO-243AA (DC)
-0.1 TO-92 (DC)
-0.01
TA = 25OC
-0.001
-1.0
FIGURE 2-9:
Operating Area.
-10 -100
VDS (volts)
-1000
Maximum Rated Safe
-0.6
VGS = -10V
VGS = -6.0V
-0.5
-0.4
VGS = -4.5V
-0.3
VGS = -3.5V
-0.2
-0.1
0
0
FIGURE 2-10:
-2.0 -4.0
-6.0 -8.0 -10
VDS (volts)
Saturation Characteristics.
2.0
TO-243AA
1.5
TO-92
1.0
0.5
0
0 25
FIGURE 2-11:
Temperature.
1.0
50 75 100
TC (OC)
125 150
Power Dissipation vs. Case
0.8
TO-243AA
0.6 TA = 25OC
PD = 1.6W
0.4
0.2
0
0.001
TO-92
TC = 25OC
PD = 1.0W
0.01 0.1 1.0
tP (seconds)
10
FIGURE 2-12:
Characteristics.
Thermal Response
2016 Microchip Technology Inc.
DS20005569A-page 5
5 Page 
VP2450
APPENDIX A: REVISION HISTORY
Revision A (September 2016)
• Converted Supertex Doc# DSFP-VP2450 to
Microchip DS20005569A.
• Changed the “TO-243AA (SOT-89)” package to
“SOT-89.”
• Limited package options to TO-92 (1000/Bag) and
SOT-89 (2000/Reel).
• Made minor text changes throughout the docu-
ment.
DS20005569A-page 11
2016 Microchip Technology Inc.
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet VP2450.PDF ] | |
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