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PDF PZ0703ETF Data sheet ( Hoja de datos )
| Número de pieza | PZ0703ETF | |
| Descripción | P-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
P-Channel Enhancement
PZ0703ETF
Mode Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ
ID
-55A
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
• Products Integrated ESD diode with ESD Protected.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2,3
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100°C
L = 0.1mH
TC = 25 °C
TC = 100°C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
-30
±16
-55
-35
-130
-50
125
41
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is -55A.
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
REV1.0
H-1-3
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PZ0703ETF.PDF ] | |
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