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PDF PK610SA Data sheet ( Hoja de datos )
| Número de pieza | PK610SA | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
PK610SA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.8mΩ
ID
83A
D D DD
G. GATE
D. DRAIN
S. SOURCE
#1 S S S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
83
52
150
22
18
37
68.5
34
13
2.3
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient3
Junction-to-Case
RJA
RJC
53
°C / W
3.6
1Pulse width limited by maximum junction temperature.
2Package limitation current is 45A
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250A
LIMITS
MIN TYP MAX
UNIT
30
1.3 1.6
2.3
V
REV1.0
1
E-16-2
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PK610SA.PDF ] | |
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